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DMP2004DWK
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
20V
R DS(on) max
0.55 ? @ V GS = 4.5V
I D
T A = +25°C
540mA
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Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage V GS(TH) <1V
Low Input Capacitance
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Fast Switching Speed
Low Input/Output Leakage
Description
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
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ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ideal for high efficiency power management applications.
Mechanical Data
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Case: SOT363
Applications
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Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
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Load Switch
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
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Weight: 0.006 grams (approximate)
SOT363
D 2
S 2
G 1
G 2
S 1
D 1
ESD PROTECTED
Ordering Information (Note 3)
Part Number
DMP2004DWK-7
Top View
Case
SOT363
Top View
Internal Schematic
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
PAB YM
PAB YM
PAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP2004DWK
Document number: DS30940 Rev. 6 - 2
1 of 5
www.diodes.com
January 2014
? Diodes Incorporated
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相关代理商/技术参数
DMP2004K 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2004K-7 功能描述:MOSFET P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2004TK 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2004TK_09 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP2004TK-7 功能描述:MOSFET P-Channel .15W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2004VK 制造商:Diodes Incorporated 功能描述:MOSFET PP CH 20V 0.53A SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, PP CH, 20V, 0.53A, SOT563
DMP2004VK-7 功能描述:MOSFET Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2004WK 制造商:Diodes Incorporated 功能描述:MOSFET P CH ESD 20V 0.4A SOT323 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, ESD, 20V, 0.4A, SOT323 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, ESD, 20V, 0.4A, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-400mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.7ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:250mW ;RoHS Compliant: Yes